| opportunity |
location |
|
| 13.35.01.C0563 |
Wright-Patterson AFB, OH 454337542 |
| name |
email |
phone |
|
| Bruce B Claflin |
bruce.claflin.1@us.af.mil |
937.713.8740 |
The goal of this research project is to develop Si1-x-yGexSny for sensor applications: 1) remote sensing applications such as IR countermeasures, remote hyperspectral imaging, and high sensitivity chemical/biological weapons detection; 2) as a potential broad NIR, MWIR, and LWIR detector material for use in laser RADAR; 3) as a CMOS-compatible material for development of electro-optic integrated circuits (EOIC) including smart pixels for advanced focal plane arrays (FPAs); and 4) for free-space optical communication.
The large size difference of the group IV elements Si, Ge, and Sn presents unique challenges which require the development of a new approach to allow synthesis of Sn containing alloys over a broad range of composition. Achieving this goal will require substantial effort in process development. Investigation of the gas phase chemistry and associated growth kinetics will provide a fundamental understanding of the surface physics and reaction chemistry involved in this process. Synthesis will be closely coupled with characterization of the basic structural, surface, electrical and optical properties of the resulting films to inform the growth optimization process.
G. Grzybowski, M. E. Ware, A. Kiefer, B. Claflin, J. Vac. Sci. Tech. B, DOI: 10.1116/6.0000406 (2020)
B. Claflin, G. J. Grzybowski, M. E. Ware, S. Zollner, and A. M. Kiefer, Front. Mater. 7:44.doi: 10.3389/fmats.2020.00044 (2020).
B. Wang, Z-Q. Fang, B. Claflin, D. Look, J. Kouvetakis, Y. K. Yeo, Thin Solid Films 654, 77 (2018).
Semiconductor; Thin Film; Growth; Group-IV alloy; GeSiSn; GeSn; Characterization; X-ray photoelectron spectroscopy (XPS); Chemical Vapor Deposition (CVD);