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Opportunity at Air Force Research Laboratory (AFRL)

Investigation of Electronic Transport Properties of Transition Metal Nitrides

Location

Sensors Directorate, RY/Sensors Division

RO# Location
13.35.01.C0221 Wright-Patterson AFB, OH 454337542

Advisers

Name E-mail Phone
Cetnar, John john.cetnar.1@us.af.mil 937-713-8990

Description

This research topic seeks to exploit unique properties of emerging semiconductor materials and their heterostructures for next generation electronic devices for high efficiency power and RF applications.  Current emphasis is on the investigation of transition metal nitride materials and heterostructures with their metal alloys with respect to electronic transport properties for III-N HEMT applications.  Research opportunities exist in epitaxial growth, characterization, theory, computation, device structure design and processing.  Resultant device structures will be assessed for high power and high speed performance potential. 


Hardy M. T, et al, Appl. Phys. Lett 110, 162104 (2017)

Saha B et al, Appl. Phys. Lett 110, 252104 (2017)

Deng R. et al, J. Appl. Phys 118, 015706 (2015)

Keywords:
Semiconductors; Electronic transport; Electronic properties; Hall-effect; Heterostructures; High electron mobility transistors; RF electronics

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants

Stipend

Base Stipend Travel Allotment Supplementation
$76,542.00 $4,000.00

$3,000 Supplement for Doctorates in Engineering & Computer Science

Experience Supplement:
Postdoctoral and Senior Associates will receive an appropriately higher stipend based on the number of years of experience past their PhD.

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