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Crystal Growth and Study of Nonlinear Quasi-Phase Matched Materials for Frequency Conversion Devices


Sensors Directorate, RY/Electromagnetics Technology Division

RO# Location
13.35.01.B7630 Wright-Patterson AFB, OH 454337542


Name E-mail Phone
Tassev, Vladimir Lubomirov 937.713.8995


This research focuses on the growth and study of a wide range of promising undoped and doped nonlinear materials such as GaP and GaAs. This range will be further extended to testing some wideband semiconductor materials like III-Nitrides. At the moment, the major deposition technique in use is low pressure vapor phase epitaxy, but other growth techniques would also be engaged. Growth of thick quasi-phase matched (QPM) structures will be performed on a variety undoped, doped, patterned, and unpatterned templates. The optimal orientation of the wafer and the pattern will be determined after investigation of the influence of a number of different growth parameters. Then oriented patterned templates will be fabricated by MBE inversion and wafer fusion bonding technique. As a consequence, thick QPM structures will be grown on them and characterized. These efforts will contribute to a better understanding of the growth mechanisms and result in increase of growth rate and crystal quality. This will provide the desired vertical propagation of the domain walls, ensuring that the consequent growth will successfully follow the initial pattern throughout the whole layer thickness. The as-grown QPM structures will be mechanically/chemically prepared, characterized, and incorporated (in collaboration with the device group) in different optical schemes to achieve conversion of frequency in the mid infrared (IR), where high power, tunable sources are currently in great demand for IR countermeasures and other military and civilian applications.



Tassev VL, et al:Journal of the European Optical Society RP 6: 110171, 2011

Matsushita T, Ohta I, Kondo T: Applied Physics Express 2: 0611011, 2009


Nonlinear optical materials; Frequency conversion devices; Quasi-phase matching; Vapor phase epitaxy; Crystal growth; Oriented patterned templates; III-V semiconductors;


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants
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