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Opportunity at Air Force Research Laboratory (AFRL)

Integration of Multicomponent Oxide Materials in Sensor Applications

Location

Sensors Directorate, RY/Electromagnetics Technology Division

RO# Location
13.35.01.B7061 Wright-Patterson AFB, OH 454337542

Advisers

Name E-mail Phone
Leedy, Kevin D. kevin.leedy@us.af.mil 937.713.8886

Description

Our research focuses on the development of oxide materials and the incorporation of these oxide materials in high performance transistor applications. Current investigations include beta-Ga2O3 MOSFETs, ZnO and InGaZO thin film transistors, and impurity doped ZnO thin films for transparent conductors.

The research entails device design, fabrication, and testing, as well as optimization and analysis of material microstructural and morphological properties to achieve enhanced device performance with particular emphasis on ALD gate dielectric, ohmic contact, and associated interface development. Research is conducted in a fully equipped ISO-5 device fabrication clean room. Materials characterization capabilities include electron microscopy, ellipsometry, x-ray diffraction, atomic force microscopy, Hall effect and photoluminescence.

 

References

Green AJ, et al: “3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped beta-Ga2O3 MOSFETs.” IEEE Electron Device Letters 37: 902, 2016

Schuette M, et al: “Ionic Metal-Oxide TFTs for Integrated Switching Applications.” IEEE Transactions on Electron Devices 63: 1921, 2016

Bayraktaroglu B, Leedy K, Neidhard R: “High Frequency ZnO Thin Film Transistors on Si Substrates.” Electron Device Letters 30: 946, 2009

 

Keywords:
Thin film transistor; MOSFET; Zinc oxide; Beta-Ga2O3; Pulsed laser deposition; Atomic layer deposition; Nanotechnology; Transparent conducting oxide; Power semiconductor devices;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants
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