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Opportunity at Air Force Research Laboratory (AFRL)

Semiconductor Laser Source Phenomenology and Development

Location

Sensors Directorate, RY/Electromagnetics Technology Division

RO# Location
13.35.01.B6994 Wright-Patterson AFB, OH 454337542

Advisers

Name E-mail Phone
Bedford, Robert G. robert.bedford@us.af.mil 937.713.8853

Description

Applications in active sensors and infrared countermeasures may often be significantly improved by utilizing unique sources. We theoretically and experimentally investigate high-brightness semiconductor lasers with unique properties such as broad tunability, mid-wave and long-wave operation, fast modulation, and multi-wavelength operation. Devices such as vertical external cavity surface emitting lasers combine the inordinate semiconductor optical gain with a classic macroscopic laser cavity, which results in a device that can achieve signal spatial-mode operation under many watts of optical output powers approaching in any wavelength achievable by semiconductor lasers. We are currently exploring non-equilibrium carrier dynamics, passive mode-locking, and 2-D materials for nonlinear optics.

Interest areas include material design and development, fabrication, coupled resonator designs, passive mode-locked lasers, spatial temporal waveform generation schemes for semiconductor lasers, as well as nonlinear frequency conversion. Fabrication facilities are available including semiconductor growth, typical microfabrication techniques, electron-beam lithography, as well as numerous metal and dielectric film deposition techniques. A full testing capability suite is available for cryogenic through high-temperature measurements for device operation.

 

Keywords:
Lasers; Semiconductor; Infrared; High-brightness; Resonator; Unstable beam; Nonlinear;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants
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