Opportunity at Air Force Research Laboratory (AFRL)
Semiconductor Laser Source Phenomenology and Development
Sensors Directorate, RY/Electromagnetics Technology Division
||Wright-Patterson AFB, OH 454337542
|Bedford, Robert G.
Applications in active sensors and infrared countermeasures may often be significantly improved by utilizing unique sources. We theoretically and experimentally investigate high-brightness semiconductor lasers with unique properties such as broad tunability, mid-wave and long-wave operation, fast modulation, and multi-wavelength operation. Devices such as vertical external cavity surface emitting lasers combine the inordinate semiconductor optical gain with a classic macroscopic laser cavity, which results in a device that can achieve signal spatial-mode operation under many watts of optical output powers approaching in any wavelength achievable by semiconductor lasers. We are currently exploring non-equilibrium carrier dynamics, passive mode-locking, and 2-D materials for nonlinear optics.
Interest areas include material design and development, fabrication, coupled resonator designs, passive mode-locked lasers, spatial temporal waveform generation schemes for semiconductor lasers, as well as nonlinear frequency conversion. Fabrication facilities are available including semiconductor growth, typical microfabrication techniques, electron-beam lithography, as well as numerous metal and dielectric film deposition techniques. A full testing capability suite is available for cryogenic through high-temperature measurements for device operation.
Lasers; Semiconductor; Infrared; High-brightness; Resonator; Unstable beam; Nonlinear;
Open to U.S. citizens
Open to Postdoctoral and Senior applicants