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Opportunity at Air Force Research Laboratory (AFRL)

Investigation and Optimization of Existing and Novel Electronic Devices

Location

Sensors Directorate, RY/Electromagnetics Technology Division

RO# Location
13.35.01.B6350 Wright-Patterson AFB, OH 454337542

Advisers

Name E-mail Phone
Crespo, Antonio antonio.crespo@us.af.mil 937.713.8877

Description

The goal of this project is to investigate and optimize the electrical performance of existing devices, devising and investigating novel new devices (e.g.,nanoelectronic devices). Investigation of these devices through electrical characterization, limited physical characterization, and modeling will enable a better understanding of their limitation and potential. The information produced in this project will push the limits of the current state-of-the-art in electronics.

An example of this research includes, but is not limited to, the investigation of oxide semiconductors by investigating changes in electrical device performance due to changes in device fabrication. Components that could be studied are possible passivation needs, improvements in ohmic, Schottky contact formation, etc.

 

Reference

Green AJ, et al: IEEE Electron Device Letters 37(7): 2016

 

Keywords:
Transistor; Power; Compound semiconductors; Oxide semiconductors; Nanoelectronic; Electronic Device; FET; HEMT; Microwave;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants
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