Our group develops new materials and processes for advanced electronics and computing architectures using a combination of top-down and bottom-up approaches. We leverage the emergent properties of two dimensional materials to enable fundamentally new capabilities in sensing, RF communications, and computing. Materials of interest include 2D transition metal dichalcogenides (TMDs), transition metal carbides/nitrides (MXenes), transition metal borides (MBenes), and thin film hybrid organic-inorganic perovskites (HOIPs). We routinely use an extensive suite of characterization tools to understand the processing-structure-property relationships in these materials. These include CW spectroscopy (UV-Vis, FTIR, Raman), modulation spectroscopy (electroabsorption), surface probe microscopy (AFM, AFM-IR, microwave AFM), electron microscopy (SEM, TEM, EELS), and X-Ray scattering (XRD, GISAXS, GIWAXS). We invite faculty fellows whose research interests will leverage these experimental resources to solve critical challenges central to the development of DAF-relevant technologies. 

References

• Scalable synthesis of 2D van der Waals superlattices (https://arxiv.org/abs/2111.02864)
• Reversibly Tailoring Optical Constants of Monolayer Transition Metal Dichalcogenide MoS2 Films: Impact of Dopant-Induced Screening from Chemical Adsorbates and Mild Film Degradation (https://pubs.acs.org/doi/abs/10.1021/acsphotonics.1c00183)
• Laser writing of electronic circuitry in thin film molybdenum disulfide: A transformative manufacturing approach (https://www.sciencedirect.com/science/article/pii/S1369702120303394)
• Halogen Etch of Ti3AlC2 MAX Phase for MXene Fabrication (https://pubs.acs.org/doi/abs/10.1021/acsnano.0c08630)
Direct detection of circular polarized light in helical 1D perovskite-based photodiode (https://www.science.org/doi/10.1126/sciadv.abd3274)