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Opportunity at Air Force Research Laboratory (AFRL)

Fundamental Studies of the Changes in Material States for Non-volatile Switching Memory Devices

Location

Materials & Manufacturing, RX/Structural Materials Division

RO# Location
13.25.05.B8381 Wright-Patterson AFB, OH 454337817

Advisers

Name E-mail Phone
Ganguli, Sabyasachi sabyasachi.ganguli.2@us.af.mil 937.255.1139

Description

An overarching theme for this research is the development of high power RF electronics for extreme environments like hypersonic, munition, etc. We are primarily interested on ultra-wide band gap semiconductors like GaN, SiC, AlN, IGZO. Specific research would look into synthesis, device processing, and device performance characterization of these wide band gap semiconductors. Material characterization methods like SEM and TEM (material microstructure and morphology), elipsometry, x-ray diffraction, atomic force microscopy, photoluminescence, temperature-dependent Hall-effect/sheet-resistivity, temperature-dependent current-voltage, deep level transient spectroscopy, transmission line, TDTR (Time Domain Thermo Reflectance) can be applicable to establish structure property relationships. Applicants with backgrounds in various semiconductors and their electrical and thermal characterization techniques, and in simple device processing techniques, are desirable. This research program will address Air Force needs for the next generation extreme environment survivable high power RF electronics.

 

References

Higashiwaki M, et al: Recent progress in Ga2O3 power devices. Semiconductor Science and Technology 31: 034001, 2016

Higashiwaki M, et al: Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal beta-Ga2O3 (010) substrates. Applies Physics Letters 100: 013504, 2012

Hwang WS, et al: High-voltage field effect transistors with wide-bandgap-Ga2O3 nanomembranes. Applied Physics Letters 104: 203111, 2014, doi: 10.1063/1.4879800

 

Keywords:
High Power RF Power Electronics; Wide Band Gap Semiconductor; Extreme Environment; RF Devices; Thermal Management; Reliability;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants
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