||Wright-Patterson AFB, OH 454337817
An overarching theme for this research is the development of on high power RF electronics for extreme environments like hypersonic, munition, etc. We are primarily interested on ultra-wide band gap semiconductors like GaN, SiC, AlN, IGZO. Specific research would look into synthesis, device processing, and device performance characterization of these wide band gap semiconductors. Material characterization methods like SEM and TEM (material microstructure and morphology), elipsometry, x-ray diffraction, atomic force microscopy, photoluminescence, temperature-dependent Hall-effect/sheet-resistivity, temperature-dependent current-voltage, deep level transient spectroscopy, transmission line, TDTR (Time Domain Thermo Reflectance) can be applicable to establish structure property relationships. Applicants with backgrounds in various semiconductors and their electrical and thermal characterization techniques, and in simple device processing techniques are desirable. This research program will address to Air Force needs for the next generation extreme environment survivable high power RF electronics.
Higashiwaki M, et al: Recent progress in Ga2O3 power devices. Semiconductor Science and Technology 31: 034001, 2016
Higashiwaki M, et al: Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal beta-Ga2O3 (010) substrates. Applies Physics Letters 100: 013504, 2012
Hwang WS, et al: High-voltage field effect transistors with wide-bandgap-Ga2O3 nanomembranes. Applied Physics Letters 104: 203111, 2014, doi: 10.1063/1.4879800
High power RF power electronics; Wide band gap semiconductor; Extreme environment; RF devices; Thermal management; Reliability;