Ultra-wide bandgap (UWBG) semiconductors, with bandgap energies larger than GaN and SiC, have the intrinsic advantages of large breakdown voltages for high power handling, emitting deep ultraviolet light, and providing stable single photon emission at room temperature due to their large bandgaps. Fundamental studies need to be pursued to understand the basic properties of these materials due to the early stage of our research and development. Therefore, in this topic, we look into various ways to characterize the UWBG materials such Ga₂O₃ and AlN to gain important knowledge on their bandstructures, electronic transport properties, defect information, interface properties, and optical emission. The characterization techniques include but are not limited to Hall-effect measurements, voltage-current measurements, capacitance spectroscopy, photoluminescence, and optical absorption. Sample preparation and test structure fabrication will also be involved to produce the test samples. The goal of this project is to generate critical and novel knowledge to evaluate UWBG materials for the interests of Air Force and DOD.

This research is unclassified and has no ITAR restrictions.

 

References

Bajaja S, et al: “Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage”. Applied Physics Letters 105: 263503, 2014

Ma N, et al: “Intrinsic electron mobility limits in β-Ga₂O₃”. Applied Physics Letters 109: 212101, 2016

 

key words

Ultra-wide bandgap; Electronics; Electronic transport; Gallium oxide; Aluminum nitride;

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral and Senior applicants