The National Academies Logo
Research Associateship Programs
Fellowships Office
Policy and Global Affairs

Participating Agencies - AFRL

  Sign InPrintable View

Opportunity at Air Force Research Laboratory (AFRL)

Ultra-Wide bandgap Materials for Electronics and Optoelectronics

Location

Materials & Manufacturing, RX/Photonic Materials

RO# Location
13.25.03.B8518 Wright-Patterson AFB, OH 454337817

Advisers

Name E-mail Phone
Mou, Shin shin.mou.1@us.af.mil 937.255.9779

Description

Ultra-wide bandgap (UWBG) semiconductors, with bandgap energies larger than GaN and SiC, have the intrinsic advantages of large breakdown voltages for high power handling, emitting deep ultraviolet light, and providing stable single photon emission at room temperature due to their large bandgaps. Fundamental studies need to be pursued to understand the basic properties of these materials due to the early stage of our research and development. Therefore, in this topic, we look into various ways to characterize the UWBG materials such Ga2O3 and AlN to gain important knowledge on their bandstructures, electronic transport properties, defect information, interface properties, and optical emission. The characterization techniques include but are not limited to Hall-effect measurements, voltage-current measurements, capacitance spectroscopy, photoluminescence, and optical absorption. Sample preparation and test structure fabrication will also be involved to produce the test samples. The goal of this project is to generate critical and novel knowledge to evaluate UWBG materials for the interests of Air Force and DOD.

This research is unclassified and has no ITAR restrictions.

 

References

Bajaja S, et al: “Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage”. Applied Physics Letters 105: 263503, 2014

Ma N, et al: “Intrinsic electron mobility limits in β-Ga2O3”. Applied Physics Letters 109: 212101, 2016

 

Keywords:
Ultra-wide bandgap; Electronics; Electronic transport; Gallium oxide; Aluminum nitride;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants
Copyright © 2014. National Academy of Sciences. All rights reserved. 500 Fifth St. N.W., Washington, D.C. 20001.
Terms of Use and Privacy Statement.