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Opportunity at Air Force Research Laboratory (AFRL)

Materials Behavior in Operating Electronic Devices

Location

Materials & Manufacturing, RX/Nanoelectronic Materials

RO# Location
13.25.02.B6434 Wright-Patterson AFB, OH 454337817

Advisers

Name E-mail Phone
Dorsey, Donald L. donald.dorsey@us.af.mil 937.255.4651

Description

The performance and lifetime of electronic devices are both critically dependent on the behavior of the constituent materials during device operation. High electric fields, high strain fields, high current densities, high temperatures, and high thermal gradients may all drive material changes that can lead to degradation in device performance and ultimately device failure. Physical mechanisms that contribute to this include diffusion of electrically active impurities, generation of carrier traps, dislocation generation and propagation, hot electron effects, and interfacial instabilities. We focus on developing models of materials behavior in operating electronic devices, and using these to predict electronic device performance and lifetime. Opportunities exist for theory and model development, as well as for characterization of materials in operating, degraded, and failed devices. Initial emphasis is on wide bandgap devices, which present a new operating regime for materials in electronics, with higher temperatures, higher frequencies, higher electric fields, and higher current densities.

 

Keywords:
Semiconductor surface chemistry; Device physics; Wide bandgap; Electronics; Reliability; Physics of failure; Solid-state chemistry; Semiconductor materials; Semiconductor surface physics;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants
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