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Surface Phenomena in the Formation of Epitaxial Quantum Structures


Materials & Manufacturing, RX/Nanoelectronic Materials

RO# Location
13.25.02.B5456 Wright-Patterson AFB, OH 454337817


Name E-mail Phone
Eyink, Kurt G. 937.656.5710


This research focuses on the modification of III-V semiconductor through the use of epitaxial metal structures such as rare earth mono pnictides and quantum structures obtained during the molecular beam epitaxial growth on normal and nano-patterned surfaces. Typically, growth of a metallic structure can only occur at the top a device structure since epitaxy metals are not used. The goal of this research is to determine the extent to which epitaxial metallic structures can be used to modify the properties of III-V materials as in the formation of hyperbolic metamaterials, plasmonic enhancement, as well as, tunnel junctions and other effects. In this work, we employ both in situ sensors (such as spectroscopic ellipsometry, desorption mass spectrometry) and ex situ characterization (such as AFM, STM, x-ray reflectivity). An immediate goal is the formation of a complete and continuous ErAs layer buried under GaAs in order to act as a starting point for the formation of a hyperbolic metamaterial. These layers are being studied to enhance detector, emitter, and other electronic and optical structures relevant to DOD applications.


Quantum dots; Metallic nanaoparticles; In situ control; Surface physics; Molecular beam epitaxy;


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants
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