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Opportunity at Air Force Research Laboratory (AFRL)

Epitaxial Crystal Growth and Study of Wide Bandgap and Heterostructure Materials for High Power Devices

Location

Materials & Manufacturing, RX/Functional Materials Division

RO# Location
13.25.01.B8386 Wright-Patterson AFB, OH 454337817

Advisers

Name E-mail Phone
Pacley, Shanee shanee.pacley@us.af.mil 937.255.5522

Description

This research focuses on epitaxial growth and study of wide bandgap heterostructure materials such as β-Ga2O3 and β-(AlxGa1-x)2O3/Ga2O3. Current growth techniques for these materials include molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD). Growth of β-Ga2O3 will be performed on, but not limited to, bulk β-Ga2O3 and c-sapphire substrates. N-type doping using Si, Fe and Sn atoms will be performed, as well as other suitable atoms containing low activation energies that will increase the electron density in β-Ga2O3. β-(AlxGa1-x)2O3 will be grown on β-Ga2O3 (010) substrates. Both β-Ga2O3 and β-(AlxGa1-x)2O3/Ga2O3 materials will be characterized using methods such as (but not limited to) Hall-effect, atomic force microscopy, transmission electron microscopy, and electroluminescence. A background in MBE, MOCVD, and various semiconductor materials and their properties is desirable.

 

References

Ghose, et al: Structural and optical properties of β-Ga2O3 thin films grown by plasma-assisted molecular beam epitaxy. Journal of Vacuum Science & Technology B 34(2): 02L109, 2016

Kaun, et al: β-(AlxGa1-x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy. Journal of Vacuum Science & Technology A 33(4): 041508, 2015

 

Keywords:
Epitaxial heterostructures; Crystal growth; Wide bandgap materials; Molecular beam epitaxy; Metal organic chemical vapor deposition;

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants
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